Abstract
The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). In this study, a statistical evaluation method is developed to analyze the filament structure evolution process in the reset operation of Cu/HfO2/Pt RRAM device. This method is based on a specific functional relationship between the Weibull slopes of reset parameters’ distributions and the CF resistance (Ron). The CF of the Cu/HfO2/Pt device is demonstrated to be ruptured abruptly, and the CF structure of the device has completely degraded in the reset point. Since no intermediate states are generated in the abrupt reset process, it is quite favorable for the reliable and stable one-bit operation in RRAM device. Finally, on the basis of the cell-based analytical thermal dissolution model, a Monte Carlo (MC) simulation is implemented to further verify the experimental results. This work provides inspiration for RRAM reliability and performance design to put RRAM into practical application.
Highlights
With conventional flash memories approaching their technical and physical limits, there will be severe problems in the scaling of solid-state memory [1,2,3,4]
Zhang et al Nanoscale Research Letters (2016) 11:269 has a significant impact on the reset transition process and there is an analytical correlationship between the Weibull slopes (β) of reset parameters’ distributions and conductive filament (CF) size or Ron [33, 34], this relationship could be made use of to analyze the filament microstructure evolution
The Cu/HfO2/Pt device with the schematic structure shown in Fig. 1a is comprised of an inert Pt bottom electrode (BE), a HfO2 resistive switching (RS) layer, and an oxidizable Cu metal top electrode (TE)
Summary
With conventional flash memories approaching their technical and physical limits, there will be severe problems in the scaling of solid-state memory [1,2,3,4]. Resistive random access memory (RRAM), with the reversible and reproducible resistive switching (RS) phenomena induced by applied electric field has been extensively studied due to its potential applications in high density memory [5] and neuromorphic electronic systems [6,7,8,9]. Zhang et al Nanoscale Research Letters (2016) 11:269 has a significant impact on the reset transition process and there is an analytical correlationship between the Weibull slopes (β) of reset parameters’ distributions and CF size or Ron [33, 34], this relationship could be made use of to analyze the filament microstructure evolution. The CF just starts to dissolve at the reset point and the reset switching tends to be gradual [34] when β the Weibull slope is a constant, independent on Ron
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