Analysis on Temperature Dependence of Hot Carrier Degradation by Mechanism Separation

Jongsu Kim,Hyungcheol Shin,Kyushik Hong

doi:10.1109/jeds.2020.2981401

Jongsu Kim, Hyungcheol Shin + Show 1 more

Open Access

https://doi.org/10.1109/jeds.2020.2981401

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Abstract

Temperature dependence under various HCD conditions was analyzed in 14 nm node FinFETs. Unlike oxide traps, interface traps show different temperature dependence depending on HCD voltage conditions. Therefore, the interface traps were separated into three components and the temperature dependence was analyzed for each component. Multiple particle process (MP) and Field enhanced thermal degradation process (FP) have a constant temperature dependence regardless of voltage conditions. On the other hand, the temperature dependence of Single particle process (SP) varies depending on the voltage condition because SP is affected by scattering. However, the components of the interface traps in at nominal operating voltage changes since self-heating effect is different comparing the accelerated voltage. Therefore, we predicted the ratio of each component under nominal operating condition.

Highlights

Hot carrier degradation (HCD) is a phenomenon that degrades performances due to the generation of defects at the Si/gate dielectric interface or inside the gate dielectric material [1]
Temperature dependence of HCD was analyzed under two voltage conditions
In the case of oxide traps, deterioration increases as temperature increases under all conditions

Summary

Introduction

Hot carrier degradation (HCD) is a phenomenon that degrades performances due to the generation of defects at the Si/gate dielectric interface or inside the gate dielectric material [1]. INDEX TERMS Hot carrier degradation, interface trap, temperature dependence, self-heating. Voltage and temperature are important factors in determining hot carrier degradation. KIM et al.: ANALYSIS ON TEMPERATURE DEPENDENCE OF HOT CARRIER DEGRADATION BY MECHANISM SEPARATION

Results

Conclusion