Abstract
This paper has analyzed the change of forward and backward current for channel doping concentration and structures to analyze off-current of double gate (DG) MOSFET. The Gaussian function as channel doping distribution has been used to obtain the similar results, compared with experimental ones, and the two dimensional analytical potential distribution model derived from Poisson’s equation has been used to analyze the off-current. The off-current has been analyzed for the change of projected range and standard projected range of Gaussian function with device parameters such as channel length, channel thickness, gate oxide thickness and channel doping concentration. As a result, this research shows the off-current has greatly influenced on forward and backward current for device parameters, especially for the shape of Gaussian function for channel doping concentration.
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