Abstract
Dynamic characteristics of semiconductor optical amplifiers (SOAs) with certain facet reflection in different operation conditions are theoretically investigated with a detailed wideband model. Influences of different facets reflectivities are numerically simulated for different lengths of active regions. The results indicate that the gain recovery time can be reduced to 50% of the initial value while the other related characteristics are optimized for appropriate facets reflections. A half reflective semiconductor optical amplifier (HR-SOA) with a cleaved facet on rear facet and an antireflection coating on front facet can speed up the gain recovery with easy realization and low cost. The related characteristics of this structure are evaluated. It's also indicated that the gain recovery has further potential to be reduced as low as twenties picoseconds for a long active region.
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