Analysis of weakly bonded oxygen in HfO2/SiO2/Si stacks by using HRBS and ARXPS

Abstract

We have used transmission electron microscopy, high-resolution Rutherford backscattering spectrometry (HRBS), and angle-resolved X-ray photoelectron spectroscopy (ARXPS) to investigate the interfacial oxidized states of hafnium oxide/silicon oxide/Si gate oxide stacks. The atomic concentrations and profiles of HRBS analysis are similar before and after annealing; however, ARXPS shows a clear difference in bond status. These results imply that weakly bonded oxygen atoms existed in the stacks alongside the suboxides. In the as-deposited layers, dioxides are found at the interfaces and suboxides in the layers whereas after annealing suboxides are found at the interfaces and dioxides are found in the layers because of redistribution of bonds during annealing. The combination of HRBS and ARXPS analyses indicated that the main oxidized states transformed from the suboxides to the dioxides with no obvious quantitative difference in the content of oxygen atoms, suggesting that reactions of the weakly bonded oxygen atoms occurred with the suboxides within the layers.