Abstract
AbstractPhotoluminescence from free excitons in GaAs has been studied by Gilleo et al. [4] for [100] stresses up to 500 kp cm−2. An analysis of their results is presented taking into account the spin‐exchange splitting of the exciton states and the variation with stress of the enveloppes functions of the exciton states. It is shown that the quasi‐cubic model can well explain the observed intensities of the lines.
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