Analysis of trace metals in thin silicon nitride films by total-reflection X-ray fluorescence

Abstract

The validity of a matrix withdrawal method for the analysis of trace metals in silicon nitride films on silicon wafers by total-reflection X-ray fluorescence has been evaluated with samples contaminated with diluted standard solutions of eight metals (Ca, V, Cr, Fe, Ni, Cu, Ta, W). The nitride matrix was removed by a decomposition step with HF vapor at ambient conditions followed by the vaporization of the product at a temperature higher than 240°C. The recovery of added metals was determined first directly after vaporization and secondly after preconcentration by the droplet collection (DC) method. The recovery of metals after vaporization at a temperature of 300±50°C was generally close to 100%, except for Cu whose recovery was approximately 40%. The efficiency of the DC step was approximately 50% for most metals but only 10–20% for Cu and Cr. Thus for most metals the total recovery was close to 50%, which is acceptable for analytical purpose. The recovery of Cu and Cr was studied in more detail considering the influence of the thickness of the nitride film, the vaporization temperature, and the composition of the DC solution. The total recovery of Cu increased from approximately 10 to 40% by lowering the temperature of the vaporization step and using a more concentrated DC solution. The recovery of Cr by DC was markedly influenced by the thickness of the nitride film with no great benefit of using a more concentrated DC solution.