Abstract
Thin film of tin (about 15 nm) was deposited on a silicon ⟨100⟩ substrate by the e-beam evaporation technique. The sample was oxidized in an oxygen atmosphere. Both the elemental tin and the oxidized sample were characterized in situ by the technique of x-ray photoelectron spectroscopy. Magnesium Kα radiation (energy = 1253.6 eV) was used as the source of x-ray excitation. The data in the tin 3d, 3p, 4p, 4d, Auger MNN regions, and the oxygen 1s region were recorded with a pass energy of 35.75 eV. The oxidized tin was found to form the SnO2 phase. The data will serve as a comparison for the study in this field.
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