Analysis of Threshold Voltage Shift of Pentacene Field Effect Transistor Based on a Maxwell–Wagner Effect

Abstract

A pentacene field-effect transistor (FET) with ferroelectric gate insulator (PVDF-TeFE) is analyzed as a Maxwell–Wagner effect element. The amount of carriers injected from the source electrode and subsequently accumulated at the pentacene FET channel changes depending on the spontaneous polarization of the gate insulator. The relationship between the spontaneous polarization and the threshold voltage shift is analyzed, and the hysteresis behavior observed in our pentacene FET with a PVDF-TeFE gate insulator is discussed in terms of carrier injection from the source electrode into the FET channel.