Analysis of thin layer optical properties of A-Si:H P-Type doping CH4 and P-Type without CH4 is deposited PECVD systems

Abstract

The study of a thin layer growth of hydrogenated amorphous silicon (a-Si: H) using the technique of plasma enhancing chemical vapor deposition (PECVD) has been conducted. Material a-Si: H is one type of materials that is applied as solar cells. In this study, a thin layer of a-Si: H grown on glass substrates by using CH4 and without CH4. Most sources Si gas were used in silane gas (SiH4) 20% dissolved in hydrogen gas (H2). The addition of CH4 gas greatly affects the structure of layer morphology and energy gap in thin layers. Based on the results of characterization using AFM, it was obtained a layer thickness which was added by CH4 100 nm and layer thickness of 45 nm without CH4. While the optical energy band gap were conducted, based on the data from characterization using UV-Vis in the wavelength range of 400-800 nm, it was obtained layer optical energy band gap added by CH4 that was 1,95 eV and layer without CH4 that was 1.89 eV.