Abstract
The thermoelectric power (TEP) for a one-dimensional lattice has been studied using the extended Hubbard model in the limitU ≠ ∞, whereU is the on-site Coulomb interaction. A new expression for TEP has been derived in this study. Our study shows that if theV-dependent term in the extended Hubbard model Hamiltonian is considered as attractive, the new expression for TEP could successfully reproduce the TEP results of high-Tc hole-doped insulating systems of Tl2Ba2Ca1−xYxCu2O8+y (Tl-2212) and Bi2Sr2Ca−xYxCu2O8+y (Bi-2212).
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