Analysis of the Transformer Modularization for High Frequency Isolated High Voltage Generator with the Silicon Carbide Devices

Abstract

This paper investigates the analysis of the transformer modularization structure for the high frequency isolated high voltage (HV) generator with silicon carbide (SiC) devices. The modularization of the HV transformers provide advantages such as low insulation stress, low dielectric loss, distributed thermal stress and size reduction at high frequency without any sacrifice to the efficiency for the HV generator. The equivalent circuit diagram is derived to better describe the characteristics of the modular transformer architectures. Finally, a 300kHz, 8kW 160kV output voltage HV generator prototype with 1.2kV SiC MOSFETs for the inverter and 1.2kV SiC Schottky diodes for the voltage multiplier is built as a technology demonstrator to validate the proposed transformer modularization concept.