Abstract
The temperature dependence of the thermal conductivity of 27 different single crystal oxides is reported from ≈20 K to 350 K. These crystals have been selected among the most common substrates for growing epitaxial thin-film oxides, spanning over a range of lattice parameters from ≈3.7 A to ≈12.5 A. Different contributions to the phonon relaxation time are discussed on the basis of the Debye model. This work provides a database for the selection of appropriate substrates for thin-film growth according to their desired thermal properties, for applications in which heat management is important.
Highlights
The temperature dependence of the thermal conductivity of 27 different single crystal oxides is reported from ≈20 K to 350 K
The application of epitaxial thin films to a broad range of phenomena which require a detailed knowledge of heat transport is becoming increasingly important
We report the temperature dependence of the thermal conductivity of a large variety of single crystal oxides, covering the range of lattice parameters used to grow the vast majority of epitaxial thin films
Summary
Analysis of the temperature dependence of the thermal conductivity of insulating single crystal oxides The temperature dependence of the thermal conductivity of 27 different single crystal oxides is reported from ≈20 K to 350 K. We report the temperature dependence of the thermal conductivity of a large variety of single crystal oxides, covering the range of lattice parameters used to grow the vast majority of epitaxial thin films.
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