Abstract
The capacitance–voltage–temperature (C–V–T) and the conductance/angular frequency–voltage–temperature (G/ω–V–T) characteristics of Au/TiO2(rutile)/n-Si Schottky barrier diodes (SBDs) were investigated over the temperature range from 200 K to 380 K by considering the series resistance effect. Titanium dioxide (TiO2) was deposited on n-type silicon (Si) substrate using a direct-current (DC) magnetron sputtering system at 200°C. To improve the crystal quality, the deposited film was annealed at 900°C to promote a phase transition from the amorphous to rutile phase. The C−2 versus V plots gave a straight line in the reverse-bias region. The main electrical parameters, such as the doping concentration (ND), Fermi energy level (EF), depletion layer width (WD), barrier height (фCV), and series resistance (RS), of Au/TiO2(rutile)/n-Si SBDs were calculated from the C–V–T and the G/ω–V–T characteristics. The obtained results show that фCV, RS, and WD values decrease, while EF and ND values increase, with increasing temperature.
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