Abstract

In this paper, the systematic change in the shape of the photoluminescence (PL) spectra with the change in the growth parameters for self-supporting porous silicon (PS) has been reported and mathematically analyzed. The confinement energy was found to be less than that in the case of non-self-supporting PS. The PL behavior is attributed to the quantum size effect. Also, a study of the temperature variation of PL for two of these samples was performed. The luminescence data can be explained in terms of a competition between an activated radiative process and a Berthlot-type hopping process.

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