Abstract
A technique for the examination of the photoluminescence spectra of multilayer heteroepitaxial structures with AlGaAs/GaAs quantum wells grown from molecular-beam epitaxy was developed. The size-quantization levels in quantum wells were calculated. Heat maps of distributions of peak wavelengths and intensities of photoluminescence spectra over the surface of epitaxial layers of different compositions were plotted. This mapping provided an opportunity to estimate the uniformity of distributions of the composition and thickness of epitaxial layers over the surface of samples. The results suggest possible ways to improve the techniques for acceptance and interoperational inspection of multilayer heteroepitaxial structures used in infrared photodetector arrays.
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