Abstract
This paper reports a simulation study investigating the drive current of a prototypical SiGe n-type FinFET built on a relaxed SiGe substrate for different values of the Ge content <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</i> in the Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(1-</sub> <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</i> )Ge <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</i> active layer. To this purpose, we performed strain simulations, band-structure calculations, and multisubband Monte Carlo transport simulations accounting for the effects of the Ge content on both the band-structure and the scattering rates in the transistor channel. Our results suggest that the largest on-current may be obtained with a simple Si active layer, because of the beneficial strain induced by the SiGe substrate. A SiGe channel instead is less performing because of strain relaxation and alloy scattering.
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