Abstract
The parameters of deep centers in the barrier structures based on intrinsic gallium arsenide that are used in the detectors of charged particles and X-ray radiation are studied via the methods of the deep-level transient spectroscopy (DLTS) and the low-frequency-noise spectroscopy. Two deep levels (DLs) with different layer concentrations are revealed in the samples under study. It is demonstrated that a high-temperature DL with relatively high ionization energy determines the spectral power density of the excess noise and reverse currents of an Al/i-GaAs detector. In addition, it is demonstrated that the DL ionization energies determined with the use of the DLTS and the low-frequency-noise spectroscopy methods are identical.
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