Abstract
We theoretically investigate the effects of layer orientation on valence subband optical absorption in cubic semiconductors. We analyze the polarization dependence of matrix elements for hole subband transitions at zero in-plane momentum, and make predictions concerning infrared absorption spectrum. The role of orientation as a key parameter in valence subband spectroscopy is clarified. The absorption spectra for 〈011〉 layer orientation is calculated, demonstrating the in-plane optical anisotropy.
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