Abstract
The methodological aspects of PSEE spectroscopy of the surface of irradiated dielectrics have been considered. A generalized method for processing the nonselective photostimulated electron emission (PSEE) spectra taking into account the effects of radiation electrification and structural disordering is proposed and has been substantiated. The procedure of separation of the emission contribution of discrete radiation centers providing, in the stationary approach, estimation of a number of parameters and the concentration of emission-active defects of the surface layer of the material has been described. The potentialities of the method have been demonstrated with the example of Be2SiO4 phenacite crystals and crystalline and glassy SiO2. Diamagnetic oxygen-deficient centers, body and surface E'-centers, as well as hole O10-centers on nonbridging oxygen atoms have been registered.
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