Abstract
AbstractThe optoelectronic mixing effect in InAlAs Schottky‐enhanced InGaAs‐based metal‐semiconductor‐metal photodetectors (MSM‐PDs) is analyzed. The measured frequency bandwidth of the optoelectronic mixer (OEM) is less than that of a corresponding photodetector. The mixing efficiency depends on the light‐modulation, local‐oscillator, and mixed‐signal frequencies and decreases nonlinearly with a decrease in optical power. We present a circuit model of the OEM to explain the experimental results. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 108–112, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11141
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