Abstract
The evolution of 220 MeV Xe ion induced radiation damage in polycrystalline Si3N4 is studied, within the fluence range 5 × 1011– 2 × 1014 cm−2, using transmission electron microscopy techniques. These irradiation conditions allow for the study of track morphology in both crystalline and in radiation-amorphized Si3N4. The average track size in the polycrystalline samples is 1.9 ± 0.4 nm and 3.1 ± 0.5 nm in the radiation-amorphized samples. The larger track sizes in the radiation-amorphized material is in agreement with predictions of the inelastic thermal spike model and the role of thermal conductivity in latent track formation.
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