Abstract

This paper presents the analysis of the mean crystallite size and microstress in thin titanium silicide films based on the broadening of x-ray diffraction profiles. The titanium silicide specimens were obtained by rapid thermal annealing of thin titanium films deposited on single-crystal silicon substrate. The experimental results have shown either the face centered orthorhombic C54 type TiSi2 structure with mean crystallite size of 50 nm or the base centered orthorhombic C49 type TiSi2 structure with 20 nm mean crystallite size, depending on annealing conditions. A decrease in the microstress has been observed with increasing annealing times at 800 °C, without significant variations of the mean crystallite size.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.