Abstract
This study analyzed the material removal mechanism in chemical mechanical polishing (CMP) via in-situ observation using an evanescent field. In particular, the contact interface between the polishing object and the polishing consumables (pad and slurry particles) was observed. To elucidate the behavior of slurry particles, the contact interfaces were studied by introducing pure water and CMP slurry. The removal rate was measured using the same consumables as the in-situ observation. Results showed that the contact area of polishing object and polishing consumables with CMP slurry is higher than that with pure water and that the polishing action of slurry particles takes place on and around the contact portion between the polishing object and the pad. Moreover, the velocity of the slurry particles to the pad is affected by the hardness of the pad. Therefore, it is necessary to increase the contact area of the pad and slurry particles with CMP slurry to obtain a high removal rate and increase the contact area between the polishing object and the pad.
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