Abstract
This paper is concerned with the analysis of interfaces of thin films of selenium and bismuth deposited onto each other by thermal evaporation. X-ray photoelectron spectroscopy and depth profiling have been used to examine the interface between the two materials. The depth over which the bismuth line shifts from an energy characteristics of Bi 2(SeO 3) 3, SeO 2, Bi 2Se 3 and/or Bi 2O 3 to an energy characteristic of bismuth metal has been used as the principal indicator in this work. Compounds of bismuth and selenium thin films are formed by chemical reaction as confirmed by X-ray diffraction.
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