Abstract
The fatigue properties of (111) oriented PbZr0.6Ti0.4O3 thin films have been studied as a function of stress signal frequency (f). The results were analyzed in the framework of the model based on trapping and releasing of carriers in band gap states located at the surfaces between electrodes and ferroelectric film (“surface state model”). The time constants of trapping and releasing of carriers, which govern the variation of the remnant polarization (Pr) as a function of the cycle number (N), were determined in agreement with classical results obtained in characterization of metal-oxide semiconductors structures. In spite of the wide variety in the shapes of Pr(N) curves obtained as a function of the frequency, experimental data have been well fitted by the model. These results confirm the soundness of the surface state model for the description of fatigue in ferroelectric thin films.
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