Analysis of the Influence of Silicon-on-Insulator Lateral Double-Diffused MOS Device Substrate Deep Depletion on the Transient Breakdown Voltage

Xiaoming Yang,Taiqiang Cao,Jianhong Li,Tianqian Li

doi:10.1109/access.2020.3017052

Xiaoming Yang, Taiqiang Cao + Show 2 more

Open Access

https://doi.org/10.1109/access.2020.3017052

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Abstract

With two-dimensional device simulation software, the influence of the deep depletion (DD) of the silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) device substrate on the transient breakdown voltage (TrBV) was analyzed. Based on the changes in the characteristics of the charge distribution and the depletion layer in the device substrate with time and the related parameters in the off state, the mechanism of their action on the transverse and vertical breakdown voltages (BVs) was studied. TrBV demonstrates completely different characteristics from the static breakdown voltage (StBV) due to the DD effect of SOI LDMOSs. Low drift region concentration (N d ) and substrate doping concentration (P sub ) are conducive to obtaining a high maximum TrBV. With increasing drain voltage (V d ), the turn-off nonbreakdown time (T nonbv ) of the device with higher P sub decreases faster. However, the T nonbv with higher P sub is higher at low V d . Therefore, the maximum T nonbv can be obtained by optimizing N d and P sub under a given V d . In addition, T nonbv is greatly reduced with increasing temperature.

Highlights

Regarding the static breakdown voltage (StBV) of silicon-oninsulator (SOI) lateral double-diffused metal-oxidesemiconductor (LDMOS), when the device is in the off state, there is an inversion layer under the buried oxide (BOX), and the blocking voltage can only be sustained by the drift region and the BOX [1]- [2]
This study provides the results of the maximum transient breakdown voltage (TrBV) and turn-off nonbreakdown time by optimizing the doping concentration in the drift region and the doping concentration in the substrate, which provides a basis for the BV design of fast switching SOI LDMOS power devices
The TrBVmax value can be obtained by optimizing Nd and Psub

Summary

Introduction

Regarding the static breakdown voltage (StBV) of silicon-oninsulator (SOI) lateral double-diffused metal-oxidesemiconductor (LDMOS), when the device is in the off state, there is an inversion layer under the buried oxide (BOX), and the blocking voltage can only be sustained by the drift region and the BOX [1]- [2].

Results

Conclusion