Abstract
Intrinsic parameter fluctuations associated with the discreteness of charge and matter become an important factor when the semiconductor devices are scaled to nanometre dimensions. These effects have a considerable effect on the overall device performance. In this work, we have employed a 3D parallel drift-diffusion device simulator to study the impact of intrinsic parameter fluctuations in a 50 nm gate length InP HEMT with an In0.7Ga0.3As channel. After careful calibration of the I-V characteristics obtained from the device simulator against experimental data we carry out a statistical study considering the fluctuations in the delta-doping layer and interface charges as well as Indium content variation in the channel. We have found that the presence of random discrete dopants in the delta-doping layer are the major factor introducing the variations in the drive current.
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