Abstract
To reduce the hump characteristic which is one of the critical issues in poly-Si TFT, we focus on crowding of gate fringing field at channel edge and suggest new modified structure of channel edge. Using dry etching process, poly-Si layer of channel edge is partially removed and the steep profile of channel edge is made into a step profile to decrease the number of carriers from active area. The edge step active (ESA) structure we proposed has a positive effect on removing the hump characteristics.
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