Analysis of the forward and reverse bias I-V and C-V characteristics on Al/PVA:n-PbSe polymer nanocomposites Schottky diode

Abstract

This paper presents the fabrication and characterization of the Al/PVA:n-PbSe Schottky diode. I-V characteristics have been measured at different temperatures in the forward bias. The behavior study of the series resistance (RS), the ideality factor (n), the effective barrier height (Φb), the Richardson constant (A*), and the leakage current with the temperature have emphasized an inhomogeneity of the barrier height and a tunneling mechanism assisted by traps in the SBD. In C-V measurements, in the reverse bias, the Al/PVA:n-PbSe has been performed as a function of temperature and frequency. The values of barrier height (ΦC-V), the built-in–voltage (Vbi) and carrier concentration (ND) and depletion layer width (W) have been calculated at different temperatures in reverse bias. The barrier inhomogeneities of the Al/PVA:n-PbSe contact has been explained on an assumption of a Gaussian distribution of barrier heights by using the potential fluctuation model.