Abstract
Abstract In the present work, ZnTe:Ni thin films were prepared using the R–F sputtering technique. X-ray diffractogramme indicates that our samples are crystallized in a cubic phase with a F-43m space group. The UV visible spectrophotometer confirms the good quality of the deposited films and also the similitude of the value of the optical band gap energy with those reported in the literature. Electrical impedance spectroscopy data were analyzed to estimate the activation and relaxation energies. In the considered temperature (303–483 K) and frequency (20 Hz–1 MHz) ranges, we show that both “grain” and “grain boundary” contributions govern the AC electrical conductivity. The data are discussed in the light of existing theoretical models.
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