Abstract
An analytical model is used to predict the effects of surface recombination current on the gain and transit time of GaInP/GaAs heterojunction bipolar transistors (HBTs). The present analysis shows that consideration of the recombination current gives current gain values that are comparable to those of the experimental results. The dependence of current gain on temperature, base doping and emitter area are also analyzed, and the variation in collector current with emitter-base voltage, temperature and doping is considered.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
