Abstract
The effect of the density of states (DOS) on the electrical characteristics of thin-film transistors (TFTs) is investigated via an experiment and device simulations. The acceptor-like DOS of an n-type TFT was extracted based on its multi-frequency capacitance-voltage characteristics. The simulation results demonstrate that the electrical characteristics of n-type TFTs are affected not only by the acceptor-like DOS but also by the donor-like DOS.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have