Abstract
In this paper, a novel device called the super junction MOSFET is analyzed using analytical modeling and numerical simulations. The effect of charge imbalance between the N and P pillars on the static and dynamic characteristics of the device is studied in detail. Simulations predict that this device is highly sensitive to charge imbalance if designed for optimum on-resistance. The breakdown voltage (BV) and E/sub off/ sensitivity can be reduced considerably by degrading the specific on-resistance R/sub on,sp/. The physics of the static and dynamic behaviour of this device under charge imbalance is explained with the help of numerical simulations.
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