Analysis of the diffusion layer thickness, equivalent circuit and conductance behaviour for reversible electron transfer processes in linear sweep voltammetry

Abstract

The parametric dependence of the diffusion layer thickness upon electrode potential and scan rate has been derived for reversible electron transfer processes in linear sweep voltammetry (LSV) using a simple analytical expression for the dimensionless current function. The quantitative variation of the conductance with potential and scan rate has been illustrated and the equivalent circuit pertaining to LSV has been proposed. Several earlier results pertaining to potential step experiments, thin layer voltammetry, surface bound LSV, radial flow at micro-ring electrodes, etc. are shown to arise from the general expression for the current function obtained here, thus indicating an isomorphism among various potential perturbation techniques.