Analysis of the diffraction pattern for optimal assist feature placement

Abstract

Assist features (AF) are an essential component of reticle enhancement techniques. Their use is indispensable in sub-100 nm technologies to ensure a maximum process window (PW) across chip, especially for critical levels. Indeed, AF, which can be binary, attenuated or phase-shifted, help in providing a larger PW to the features they assist when they are used in conjunction with off-axis illumination. The depth of focus (DOF) of an isolated structure is improved by the presence of AF by providing to the optical system a diffraction pattern close to the diffraction pattern of a dense structure. The resulting DOF and exposure latitude (EL) are dependent on the relative position of the AF from the main feature. Moreover, the PW varies while inserting one, two or more AF. The relative position of each influences the results. In this paper, a method will be detailed to optimise the placement of the AF. For the purpose of this study, the diffraction pattern induced by the insertion of one or several AF is analysed in frequency space. This analysis details the evolution of the intensity of even and odd orders during the insertion of AF. The calculation of the optimum placement is detailed, and the DOF resulting from the insertion of one or more AF is also presented.