Abstract
The electrical transport properties of Ti/n-Si Schottky barrier structure irradiated by 100 MeV O7+ ion has been studied between 120 K and 320 K and compared with unirradiated Ti/n-Si structure to gain the understanding of carrier transport mechanism in irradiated devices. The barrier parameters have been extracted using the current-voltage (I–V) characteristics in forwarding bias. It is found that Schottky barrier height (zero bias) increases while the value of ideality factor becomes smaller with increasing temperature. Recent models consisting of inhomogeneous barrier potential at the metal-semiconductor (MS) interface have been used to explain the behavior of barrier parameters. The role played by the high energy ions at MS interface during irradiation is considered to understand the observed behavior.
Published Version
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