Abstract

This paper introduces an effect of temperature on small-signal equivalent circuit parameters have been analyzed for "AlInN/AlN/GaN metal-oxide-semiconductor high-electron- mobilit-transistor (MOS-HEMT)". The analysis has been performed through the temperature range from −50 °C to 100 °C by S-parameter calculations at 100 GHz frequency. The thermal analysis of equivalent circuit parameters was investigated for first-time with the proposed device. The equivalent-circuit-parameters such as intrinsic delay time (τ), gate-source capacitance (C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</inf> ), extrinsic resistances (R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</inf> , R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</inf> , R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</inf> ), and intrinsic resistances (R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</inf> , R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in</inf> , R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gd</inf> ) show a positive shift with increasing temperature. On the other hand, intrinsic transconductance (g <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> ), drain-source capactance (C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</inf> ), and gate-drain capactance (C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gd</inf> ) show a negative shift with temperature. Obtained results will give some valuable information for design optimizations of GaN-based MMICs and other high power/frequency applications.

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