Abstract
High Power Semiconductor Radiation Balanced Laser (RBL) is an attractive proposition, however, both theoretical and experimental research has shown that fully balanced semiconductor RBL remains an elusive goal. At the same time, rare-earth doped materials have been successfully optically cooled. In this talk we present the investigation of tandem RBL consisting of semiconductor vertically emitting laser (VECSEL) that is cooled by a rare earth doped material in thermal contact with it and show that substantial power can be obtain in the radiation balanced regime.
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