Abstract
This paper presents the results of a study of the scientific and engineering principles of the creation of silicon multiplexers intended for reading out and preprocessing photodetector signals in the IR ranges 8–14 and 3–5 μm. The noise equivalent temperature difference is estimated for far-IR photodetectors based on silicon multiplexers with linewise and framewise accumulation of signals from HgCdTe photodiodes (PDs). The features of how the structural–technological limitations in the silicon readout circuits affect the characteristics of the IR photodetectors are analyzed for a wide range of parameters of HgCdTe PDs and a wide range of technological design norms for fabricating silicon multiplexers.
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