Abstract
A gold (Au) micro-interconnection, which connects through-hole electrodes in a three-dimensional chip stacking LSI, is composed of several tens of grains. The anisotropic property of grains influences on the mechanical reliability if the size of the interconnection becomes small in comparison with the grain. In this study, the stress distribution in the Au micro-interconnection is invistigated by using the finite element method (FEM) analysis. The crystallographic structure of the Au micro-interconnection is obtained by a three-dimensional simulation based on a nucleation and growth model. The FEM analysis shows that the stress is concentrated on the region near the micro-interconnection/substrate interface edge and that a stress singularity exists there. The stress distribution of the micro-interconnection varies owing to the microscopic structural factor, which is due to the shape and crystallographic orientation of grains. It is found by statistical evaluations of plural analytical models that the stress variation nearly follows a normal distribution.
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