Abstract
In this paper we investigate the stochastic Schottky barrier variations of printed distributed Schottky diodes consisting of a self-assembled arrangement of crystalline silicon microcones onto a metal layer. The microcone formation emerges from an inkjet printed Si nanoparticle film after laser sintering yielding a Schottky diode when a corresponding top metallization is applied. The elementary microcone diodes differ electrically in their barrier height, which is modelled as a gaussian distribution. The circuit simulation software Advanced Design System (ADS) is used to analyze the rectification abilities of the overall structure. The results show that a distributed barrier height leads to a smoother IV-characteristic, which can also be interpreted as an aggregated diode with a smaller turn on voltage. A Fourier analysis of the rectified time-domain signal shows an amplification of the frequency components up to the third harmonic in comparison to a non distributed single diode.
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