Analysis of spectroscopic-ellipsometry and thermoreflectance spectra of Si

Abstract

Spectroscopic-ellipsometry (SE) and thermoreflectance (TR) spectra of bulk single-crystalline Si are measured. Measurements are made on the same sample in the 2.5–6.0 eV range at room temperature. These data are analyzed on the basis of a simplified model of interband transitions, named the model dielectric function. Results are in satisfactory agreement with the experimental data over the entire range of photon energies. The finding definitely links the temperature-induced change in the dielectric function (TR) to the first derivative of the dielectric function (SE).