Abstract
The solid phase crystallization of amorphized Si films on quartz substances is studied by means of the transmission electron microscope observation of grain growth. The amorphous Si films are prepared by Si ion implantation into polycrystalline Si films deposited by low-pressure chemical vapor deposition. It has been found that the twin formation in grains at the early stage of the crystallization accelerates the growth rate preferentially in a 〈112〉 direction. During the twin growth about a given 〈112〉 direction, other twins also grow from the twin boundary dendritically in some other 〈112〉 directions, leading to the formation of a large grain of dendritic structure.
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