Abstract
AbstractWe proposed the balanced vertical double ‐ diffused MOS (B‐VDMOS) transistor. The B‐VDMOS transistor is not destroyed by avalanche breakdown and acquires the high second breakdown current. Owing to the high second breakdown current, the B‐VDMOS transistor has high electrostatic discharge (ESD) robustness. This paper presents the mechanism of the snapback phenomena and clarifies the cause that the B‐VDMOS transistor has the high second breakdown current. We find the cause that current does not become concentrated even after avalanche breakdown in the B‐VDMOS transistor. Copyright © 2009 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.
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