Abstract
This work presents simulated output characteristics of gas sensor transistors based on graphene nanoribbon (GNRFET). The device studied in this work is a new generation of gas sensing devices, which are easy to use, ultracompact, ultrasensitive, and highly selective. We will explain how the exposure to the gas changes the conductivity of graphene nanoribbon. The equations of the GNRFET gas sensor model include the Poisson equation in the weak nonlocality approximation with proposed sensing parameters. As we have developed this model as a platform for a gas detection sensor, we will analyze the current-voltage characteristics after exposure of the GNRFET nanosensor device to NH3gas. A sensitivity of nearly 2.7% was indicated in our sensor device after exposure of 1 ppm of NH3. The given results make GNRFET the right candidate for use in gas sensing/measuring appliances. Thus, we will investigate the effect of the channel length on the ON- and OFF-current.
Highlights
The gas detection is very important in both research and commercial applicability
carbon nanotubes (CNT) have been presented as an ideal material for developing sensor technology because of their one-dimensional (1D) structures with high surface-to-volume ratio that enables them to integrate as gas sensing
The sensing measurements of graphene-field effect transistor (FET) were carried out using NH3 gases, which behave as electron donor [28]
Summary
The gas detection is very important in both research and commercial applicability. There is an increasing need for a higher sensitivity and selectivity as well as for a faster response time. CNT have been presented as an ideal material for developing sensor technology because of their one-dimensional (1D) structures with high surface-to-volume ratio that enables them to integrate as gas sensing. Despite their promises, CNT still face considerable challenges due to the existing growth methods which do not allow controlling the structural uniformity such as diameter, number of graphene walls, and electrical properties by separating metallic and semiconducting CNT and so CNT involved structural heterogeneity [4]. CNT unique electronic characteristics like tunable conductance, ballistic transport, and highly charged mobility [13] create an area of strong interest for sensing application in nanotechnology [14]. We have employed the field effect transistor (FET) as a basic structure of our gas sensor model
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