Analysis of Silicon Solar Cell Device Parameters using PC1D

Abstract

Perceiving the role of each layer relevant to the parameters in a silicon solar cell is important for engineering of solar structures for high efficiencies. PC1D simulation of silicon solar cells were carried out in this work to evaluate the performance parameters of each layer and outcomes were analyzed considering their effects in final cell. Absorber layer, emitter layer, antireflection coating layer and back surface field layer were studied especially in terms of doping levels, thicknesses, absorbance behavior and final cell performance. The short circuit current density (Jsc) is found to be directly proportional to the absorber layer thickness until the thickness of 160µm whereas the open circuit voltage (Voc) is inversely proportional for the range of 30 to 280µm. The device with 2x1020 cm-3 doping concentration of emitter was more efficient for homogenous emitter solar cells. The thickness of emitter has degrading effects on the efficiency of the device, the device with 0.1µm emitter thickness is found to have the highest efficiency. Doping concentration of back surface field had considerable effect on Voc of the device for the range of 3x1017 to 3x1018 cm-3. Triple layer antireflection coating improved the short circuit current density by a ratio of 50.8% and overall efficiency by a ratio of 51.07% comparing to the those of the cells without antireflection coating. Measured data of a fabricated high efficiency solar cell was in conformity with the results of the simulation. According the performed studies and achieved results, understanding and estimating the effects of these primary parameters on solar cell performance is beneficial for designing a high efficiency solar cell structure.