Abstract
The possibilities of laser mass spectrometry in determining the main composition of silicon carbonitride films (SiCxNy) deposited on a substrate made of germanium and gallium arsenide are considered. The conditions of laser sampling were selected and the instrument was adjusted to identify the major components of films synthesized by the plasma deposition. The instrument was calibrated by neat silicon compounds to obtain quantitative data on the concentrations of carbon, nitrogen, oxygen, and silicon. A calibration method was proposed, and the concentration of hydrogen in the layers of silicon carbonitride was estimated.
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