Abstract

Through the plasma particle simulation (PIC), we successfully simulated the silane (SiH 4 ) and nitrous oxide (N 2 O) plasma enhanced chemical vapor deposition (PECVD) process for preparing SiO 2 thin film. The process of simulation experiment was analyzed, which were the kinetic energy, and the sheath of space and the energy distribution ions of ionization. Analysis of these physical parameters, a comparison of SiH 4 and N 2 O plasma enhanced chemical reaction chemical deposition experiments, simulation results from the kinetic energy, energy, and the space energy distribution of ions in sheath perspectives can explain reasonably the plasma enhanced chemical vapor deposition (PECVD) process for preparing SiO 2 film, through these particle simulation (PIC), the theory can reasonably interpret the use of silane (SiH 4 ) and nitrous oxide (N 2 O) forming mechanism of the generation of SiO 2 thin film.

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