Analysis of SiC IMPATT device in millimeter-wave frequencies

Abstract

SiC IMPATT devices have an efficiency and power advantage over Si and GaAs IMPATT devices at millimeter-wave frequencies. A lucky drift model describing ionization rates as a function of electric fields at high temperatures has been incorporated into a Read-type large-signal model. The simulation demonstrates that the efficiency (and dc power density) at operating temperature (800 K) for SiC p+n single-drift flat-profile IMPATT structures is 12.4% (6.7 MW/cm2), 15% (4.5 MW/cm2), and 15.8% (3.3 MW/cm2) for frequencies of 200, 100, and 50 GHz, respectively. © 1998 John Wiley & Sons, Inc. Microwave Opt Technol Lett 18: 167–168, 1998.